Recent years have witnessed the rapid growth in the performance of perovskite solar cells (PSCs), with the certified power conversion efficiency now reaching 22.7%, which is close to the estimated theoretical limit and even comparable to the commercialized Si-based counterparts. Currently, stabilization of perovskite films for long-term operations and development of low-cost electron/hole transport materials are regarded as important research issues in PSCs. In particular, there have been a variety of approaches to replace the costly state-of-the-art hole transport materials (HTMs), namely spiro-OMeTAD and poly(triaryl amine) (PTAA). For instance, carbonaceous HTMs in PSCs manifested high performances, and even HTM-free PSCs were successfully demonstrated.<br/>Meanwhile, there have been efforts to utilize inorganic materials as a HTM in PSCs, and various Cu compounds (CuI and CuSCN) and a number of oxides and chalcogenides have shown decent performances. However, many of the previously suggested materials require complicated processes for synthesis and deposition, and they also endanger the long-term stability of the perovskite light absorbers. To resolve this problem, in this presentation, we introduce a room-temperature deposition procedure to fabricate transition metal nitride films with high transparency and uniformity. When the synthesized nitride films were applied as HTMs in PSCs, power conversion efficiency that is comparable to the case of state-of-the-art inorganic HTMs was achievable. Furthermore, we carried out comparative studies on various nitride HTMs based on diverse experimental and computational techniques to elucidate the relationship between materials characteristics and hole transport properties in nitride materials.

Earth-abundant metal nitrides as hole transport materials for perovskites solar cells

256th National Meeting (2018)

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