Rare earth oxides (REO) and rare earth nitrides (REN) are interesting material systems for different technological applications. The REO such as Gd2O3 have potential in microelectronics as insulating (high-k) gate oxides. RENs like GdN are promising for spintronic applications owing to their intrinsic semiconducting and magnetic characteristics. Due to the immense potential of RENs for spintronic based applications, there is a growing need for developing high quality REN based materials. Chemical vapor deposition (CVD) and atomic layer deposition (ALD) techniques are highly promised routes for depositing device quality layers. The CVD and ALD of RENs are relatively unexplored although these techniques have the distinct advantage in terms of large area deposition, conformal coverage and scalability. Herein, we present the fabrication of Gd2O3 and GdN layers via ALD and CVD respectively using tailored precursors. The relevant precursor chemistry for lanthanides and their application for film deposition will be discussed followed by investigation of functional properties

Rare earth oxides and rare earth nitrides via vapor phase approaches using tailored metalorganic precursors

256th National Meeting (2018)

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