We use high resolution scanning tunneling microscopy/spectroscopy (STM/STS) to study the atomic structure and local electronic properties of 2D MoS2 and WSe2 monolayers on HOPG substrates, and show that the electronic bandgaps can be tuned by strain at grain boundaries and dislocations [1,2]. Using PTCDA as a prototype semiconductor organic molecule, we show that a monolayer transition metal dichalcogenide (TMD) can effectively screen an organic-inorganic heterointerface [3]. We demonstrate the fabrication and unravel the electronic properties of a lateral doped/intrinsic heterojunction in 2D WSe2, partially covered with a molecular acceptor C60F48 [4]. We also demonstrate the self-assembly of DAP molecules into a hexagonal porous network on a monolayer MoSe2 surface, as a result of the different electron affinities of the inversion domain boundaries and the pristine MoSe2 domains [5].

Organic, 2D transition metal dichalcogenide interface

2019 Spring National Meeting

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