Organo group 13 amides can be used as CVD, ALD, and ALE precursors for the metal nitrides. Certain ternary nitrides, such as Ga0.75Al0.25N and Al0.83In0.17N, are desirable for electronic devices. The homologous series of amides, (R2MNH2)x, where M=Al, Ga, In and x= 2,3 are readily synthesized by the reaction of a R3M with NH3 in dry heptane under argon, and have similar physical properties. When mixtures of these compounds are prepared with different metals, all possible combinations of their dimeric and trimeric rings can occur. This study describes the synthesis of these series where R = neopentyl, the equilibria when the Al derivative is mixed with the Ga or In derivatives in technologically relevant ratios, and the metal ratios of the sublimates of the mixtures. The equilibria were measured by NMR in solution, and by ICP-OES analysis.

Volatilization of mixed metal group 13 amides and the stability of their metal ratios

2019 Spring National Meeting

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