Atomic layer deposition is a technique to deposit variety of thin films such as TiO2 and Al2O3 through surface reactions with the corresponding metal source, or precursor, from the vapor phase. As the semiconductor industry pushes for smaller and more spatially demanding devices, area selective atomic layer deposition (AS-ALD) demonstrates a promising deposition method that may eliminate a lithography step in device fabrication and reduce errors as the miniaturization of devices presents increasingly difficult challenges. To provide a broader range of materials that enable AS-ALD, organic molecules and brush polymers were developed to either inhibit or activate a surface for ALD growth. Although significant progress has already been made in developing useful methodologies, the search for more selective materials is continuing. Here we examined the inhibition of ALD growth using variety of commercially available unfunctionalized polymers such as polyvinyl chloride (PVC), polystyrene (PS) and polyethylene (PE). Then PVC was synthetically tailored to selectively adhere to a metal oxide surface acting as a blocking agent in the ALD of TiO2, as bulk PVC exhibited.

Inhibiting the atomic layer deposition of TiO2 using brush polymers

2019 Spring National Meeting

The official archive and repository for all ACS Meetings & Expositions abstracts and select posters or presentations.