Motivated by the search for new spintronic devices based on topological materials, Sb net containing CeSbTe was recently discovered to be a candidate to study the interplay of magnetism and topology, specifically to determine if it is highly sensitive to magnetic fields. CeSbTe is an antiferromagnet at T = 2.75 K and exhibits several metamagnetic transitions as well as demonstrating that time reversal symmetry can be broken with small magnetic fields (~0.25 T). In our efforts to study the effect of spin-orbit coupling in topological states, we have mapped out the synthetic conditions to incorporate bismuth into CeSbTe. Bismuth-containing compounds have been calculated to exhibit spin-orbit coupling and is therefore the ideal dopant to study the role of relativistic effects such as spin orbit coupling in topological insulators. The structure of LnSb1-xBixTe (Ln = La, Ce, Pr; 0 ≤ x ≤ 1) crystallizes in a well-known structure type, ZrSiS (also known as PbFCl) in the tetragonal P4/nmm space group with the Ce, Sb/Bi, and Te, occupying the 2c, 2b and 2c sites respectively. In this talk, I will present the solid state flux synthesis used to grow single crystals and the effect of Bi doping/spin-orbit coupling on the magnetism and topology of CeSbTe.

Crystal growth and characterization of bismuth-doped topological LnSbTe (Ln = La, Ce, Pr)

2019 Spring National Meeting

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