Paramagnetic point defects in semiconductors and insulators are a promising qubit class with nitrogen-vacancy center in diamond as a prominent example. Identifying similar defects in other materials could lead to more flexibility in device design and greater functionality of the resulting devices. To create qubit systems by design, we studied the physical properties of the materials that host useful defect centers and came up with the hypothesis that wide band gap insulators with nuclear spin-free lattice can increase the spin-spin relaxation time, T2, which represents the maximum operation time of a qubit. To test this, we have grown oxygen deficient single crystals of Ba2CaWO6 where the oxygen vacancies create W(V) spin centers. We present x-ray diffraction, neutron diffraction, continuous wave and pulsed electron paramagnetic resonance spectroscopic measurements of this system`. Coherence studies show at 5 K, spin-lattice relaxation time T1, which is the upper limit to T2, in this material is 310(30) ms lending credence to the design hypothesis.

Oxygen vacancy induced defect spin centers by design in single crystals of Ba2CaWO6

2019 Spring National Meeting

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