The rapid growth of technologies such as artificial intelligence and autonomous vehicles is fueling a need for more powerful electronic chips, which the microelectronics industry is working to meet with ever-more complex nanoscale device structures. With this growing need for nanostructure fabrication, selective deposition is gaining attention as an important process to achieve pattern features at the ~10 nm length scale. Both two-dimensional planar geometries and three-dimensional structures will benefit from selective deposition processes, with bottom-up growth strategies providing advantages in reduced process complexity and improved pattern fidelity. In this presentation, we will describe how control over surface chemistry using molecular monolayers can achieve area selective atomic layer deposition (ALD).  ALD is a good choice for selective deposition because its chemical specificity provides a means to achieve selectivity on a spatially patterned substrate. In particular, inhibitory layers such as self-assembled monolayers (SAMs) can alter the native surface reactivity, allowing ALD selectivity to be achieved. We will show that this process provides good selectivity for thin deposited films, and demonstrate selective deposition on different materials, including dielectrics and metals such as Cu, Co, W and Ru. Strategies to improve selectivity will be described, including repairing the SAM between ALD cycles and adding a selective etching step. Directions toward new area selective deposition processes will also be presented.<br/>

Area selective atomic layer deposition for advanced nanofabrication

2019 Fall National Meeting

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