Defect and trap sites are important limiters of excited state transport in both organic and inorganic materials. The role of traps is especially relevant to low-cost materials produced by solution processing, where the end functionality is often determined not by the bulk properties, but rather by the intrinsic disorder introduced by the fabrication technique. We have utilized time-resolved photoluminescence microscopy to directly probe charge carrier diffusion and the effects of trap sites in individual CsPbBr<sub>3</sub> perovskite domains. With sub-micron spatial resolution and 10s of picosecond time resolution, the broadband PL spectra provide a direct probe of band-edge charge carrier evolution along both energetic and spatial coordinates. By correlating these experimental measurements with kinetic Monte Carlo models, we have begun to unravel the impact of processing conditions on domain-to-domain differences in both excited state lifetime and diffusion coefficient, material parameters which are strong determiners of optoelectronic performance in this technologically promising class of materials.

Probing microscale disorder with time-resolved emission and reflection microscopies

2019 Fall National Meeting

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