Organic photodiodes (OPDs) are arising as decent alternatives to replace Si-based photodiodes for CMOS image sensor application, due to the feasibility of realizing a thin total sensor thickness and the elimination of color filters. Both merits can provide a dramatical enhancement of the degree of integration for image sensors. Although many methods to realize OPDs with thin thickness (&lt;800 nm), color-selectivity or high specific detectivity (&gt;10<sup>12</sup> Jones) have been developed, no techniques to realize those merits simultaneously have been developed. To solve this issue, we introduced an “etalon-electrode” in conventional OPD architecture. Etalon-electrodes have the function of the electrode and the color selection simultaneously. A strategically designed OPD structure including an etalon-electrode with an organic semiconductor-based panchromatic photoactive layer and a counter electrode showed narrowband R-/G-/B-selective spectral response, depending on the thickness of each layer constituting etalon-electrode. Furthermore, the wavelength selective property from the etalon-electrodes enable more facile patterning for realizing full-color image sensor, and a prototype of 10 × 10 image sensor with a pixel size of 500 μm was successfully achieved, resulting in accurate capture of a clear full-color image.<br/>

Reconstructing device architecture of organic photodiode using etalon-electrode to realize color filter free image sensor

2019 Fall National Meeting

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