Directed self-assembly (DSA) of block copolymers (BCPs) is one approach to the pattern density multiplication required to achieve high-volume manufacturing of the next-generation of memory and storage devices. One important application for DSA is in mastering nanoimprint templates for the next-generation bit patterned media for magnetic information storage. A hybrid chemo-/grapho-epitaxy DSA process is described: Polar guidelines were first produced by nanoimprint lithography on an underlying chromium hard mask over silicon. Polymer brushes that selectively graft to the chromium surface and not to the polar guidelines were synthesized and used to guide the DSA. Brush grafting temperatures and brush compositions were studied to achieve both good selectivity and alignment control. Using this approach, the DSA of poly(3,4-methylenedioxystyrene-block-pentamethyldisilylstyrene) (PMDOS-b-PDSS) and poly(pentamethyldisilylstyrene-block-2-vinylpyridine) (PDSS-b-P2VP) produced 50 Å and 40 Å lines and spaces respectively. A density multiplication factor of 4X was achieved. Both 50 Å fingerprint patterns and DSA lines were subsequently transferred through a chromium hard mask and unto silicon to make a silicon master template for imprint lithography.

Block copolymers for production of 50 Å lines and spaces for nanoimprint templates

2019 Fall National Meeting

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