Atomic layer deposition (ALD) is a vapor phase thin film deposition technique based on sequential and self-limiting surface reactions. Due to various advantages such as excellent conformality over geometrically complex surfaces and tunable film composition, ALD is being adopted as a powerful tool for many applications, especially in semiconductor device fabrication. Therefore, large research effort is currently underway toward development and improvement of new materials and processes of ALD. As the entire ALD process is based on the reactions of precursors on the surfaces of the substrates, it is crucial to understand the surface chemical mechanisms at molecular level, including the reversible and irreversible adsorption reactions of the precursors, ligand-exchange and oxidation-reduction reactions of counter-reactants, and mixture of different elements. In this presentation, fundamental principles and recent examples on various aspects of the reactions related to ALD will be discussed. Especially, the talk will focus on how experimental and simulation approaches together can synergistically enhance the research and development of materials and processes of ALD, such as widening of temperature window, and enhancing selectivity in area-selective deposition.

Applications of surface chemistry toward efficient development of atomic layer deposition processes

ACS Spring Meeting 2021

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