The electronic and optoelectronic properties of 2D materials and their stacking heterostructures have inspired enormous interests. WSe2, with a p-type semiconducting property, represents a foremost building block in the p-n junctions. WSe2 shall possesses the features of large area, homogeneity and precise layer control. To date, there is yet an ideal synthesis method ever reported. Here we present a facile approach to prepare high quality, wafer-scale homogenous WSe2 full films with precise layer control. In brief, we first deposit a thin layer of metal precursor and then do the selenizaition process. With care of the vacuum deposition of metal thin film, we are able to control upon selenization the film thickness of WSe2, i.e., its layer number. Eventually the high quality of the synthetic film has been reflected on the high performances of saturable transmission in saturable absorbers for the Q switched laser, photodetectors and transistors. Our finding may pave the way towards wafer scale integration of transition metal dichalcogenide in the integrated devices such as optics, optoelectronics and electronics.

Wafer-scale two-dimensional WSe2 materials for optics, optoelectronics and electronics

ACS Spring Meeting 2021

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