Understanding the generation and dissipation of heat in semiconductor nanocrystals is critical to implementation in devices, particularly those that require large amounts of carriers such as photovoltaics and LEDs. Absorption of light causes heat through both intraband relaxation and Auger recombination, in excess this heat can melt the nanocrystals or otherwise disrupt important optoelectronic properties. Despite the precedence for such studies, it is quite difficult to study thermal properties. Time-resolved X-ray diffraction allows ultrafast (~80 ps) resolution of cooling and recrystallization of nanocrystals using a laser pulse to excite samples and X-ray pulses to probe the crystalline lattice. Using this technique a variety of nanocrystal compositions have been studied (CdSe, CuInSe<sub>2</sub>, CsPbBr<sub>3</sub>, Ge, TiN). Here we provide a summary of these results in a variety of systems and correlated with temperature dependent X-ray diffraction and modeling.

Understanding the thermal properties of semiconductor nanocrystals using time-resolved X-ray diffraction

ACS Spring Meeting 2021

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