Molecular doping plays an important role in the modification of carrier density of organic semiconductors thus enhancing their optoelectronic performance. However, controllable and stable doping remains challenging. Herein, a novel radical cation of hexabenzoperylene(HBP), is developed as photoactive doping with extraordinary stability in air. Photo-induced oxidation in situ generates radical cation and subsequently dopes the HBP films. Additionally, the excellent reversibility of HBP radical cation ensures the controllable dedoping. Accompanied by the photo electroactive HHBP reversibly changed between cationic and neutral state, the organic field effect transistors (OFETs) based memory exhibits reversible switching with a current contrast larger than 103. The charge retention time can maintain over 12 h., nonvolatile photonic transistor memory devices exhibit high photoresponsivity of 223 A W−1, and a long retention time of more than 12 h with a current contrast larger than 103. Compared with the traditional floating gate memory transistors, this device exhibits simple processability as well as an extremely low operating driving force of 0.1 V. Moreover, quantitative oxidation of HBP enables controllable doping with multiple responses to different intensities of light and a broadband light response that highlight their promising potential for light recorder application.

Photo-Electroactive Nonvolatile Memories Enabled by an Ultrastable Radical Cation

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