Constructing a Z-scheme heterojunction has been proven as an effective approach to separate photogenerated carriers and to improve the performance of semiconductor photocatalysts. In this study, a novel Z-scheme β-Bi2O3/Bi/g-C3N4 heterojunction with oxygen vacancy photocatalyst was developed via a thermal treatment combined with an in-situ reduction method. The generated active species •O2- confirmed a Z-scheme degradation mechanism for NO degradation over the β-Bi2O3/Bi/g-C3N4 photocatalyst. As a charge transfer bridge and a hot electron donor, metallic Bi can facilitate efficient electron-carrier separation. The photocatalytic degradation
efficiency over this Z-scheme photocatalyst was significantly higher than that of the pristine g-C3N4. Interestingly, effective NO degradation involved NO oxidation into NO2-/NO3- and reduction into N2 synchronously. The high degradation efficiency and reduction pathway occurring could be ascribed to the enhanced generation and separation of the photogenerated carriers. Furthermore, the oxygen vacancy on the surface of the photocatalyst can also act as traps to localise the photogenerated electrons and effectively inhibit their recombination with holes. This study has provided a new route for regulating the photocatalytic reaction pathway for NO degradation through a simple synthesis method.

Synthesis of Z-scheme β-Bi2O3/Bi/g-C3N4 Photocatalyst with Effective Separation of Electron–Hole Pairs for NO Degradation under Visible Light Irradiation

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