The choice of MOSFET manufacturing technique used in Emergency response robot

Liu Yining, Wang Renze, Yang Yapeng,Zhang Jiangang,Wang Ning,Feng Zongyang, Jia Linsheng, Liang Boning

（China Institute for Radiation Protection, Taiyuan  030006）

Abstract: For the aim of helping the development of robots used in Radiological Emergency Planning and Preparedness, the TID effects on the threshold voltage shift(△Vth) of different kinds of MOSFET with different geometry and different scaling technology was compared. The different gate width and length dependent between bulk CMOS process and NW MOSFET as well as higher and lower technology node is noticed. The reason of this difference is explained from the aspects of RINCE and RISCE. It is found that some studies in recent years have corrected the influence of negative bias temperature instability (NBTI) when considering radiation effects. And the TID effects on △Vth of several kinds of new devices such as MOSFETs with new layout geometry as well as Ge-channel and GaN channel MOSFETs are described which can be investigated more deeply. In addition, TCAD simulation is introduced to be used in both mechanism investigation and modeling verification.

Keywords: total ionizing dose (TID); threshold voltage shift; MOSFET; TCAD;

 

1\. Introduction

TID effects on the threshold voltage shift(△Vth) of different kinds of MOSFET is described in Section 2. TCAD simulation is introduced in Section 3. The conclusion comes in Section 4.

2\. Radiation effects on *threshold voltage shift(△V~th~)* in MOSFETs

2.1 bulk CMOS process

It should be noted that a smaller technology node can decrease the TID induced *△V~th~*. And in bulk CMOS process, short-narrow-channel transistors exhibit a worse TID *△V~th~* tolerance under same technology node. \[1-3\]

2.2 Silicon-On-Insulator (SOI) transistors

Compared to the performance of bulk CMOS process, common SOI MOSFET shows higher threshold voltage shift with less Total ionizing dose. \[4-5\]

2.3 NW devices

  NW FETs with a narrow width (W~NW~ ≤ 30 nm) and long channel (L~G~ \>= 100 nm) are more TID tolerant in *△V~th~*. The reason is that the tri-gate partly screens the impact of trapped charges on the electrical behavior and mitigate the Radiation-Induced Narrow Channel Effects (RINCE). \[6-7\]

2.4 Ge channel and Ga channel FETs

   Negative bias-temperature instability (NBTI)

is a serious reliability problem in modern semiconductor devices. Some researchers subtract the NBTI from test results during analyses to obtain the pure TID response. \[8\]

3\. TCAD simulation

Simulate the 28-nm pMOSFETs by adopting a 3-D structure with halo implantations and STI can explain the length dependence of TID effects, which is called Radiation-Induced Short Channel Effects (RISCE). \[3\]

\[1\]L. E. Seixas, IEEE T DEVICE MAT RE, vol. 17, no. 3, Sep. (2017),593-595.

\[2\]F. Faccio et al. IEEE Trans. Nucl.Sci. vol. 65, no. 1, Jan. (2018) ,164–174.

\[3\]Stefano Bonaldo et al. Trans. Nucl.Sci. vol. 66, no. 1, Jan. (2019),82-90.

\[4\]Chun-Min Zhang et al. IEEE Trans. Nucl.Sci. vol. 64, no. 10, Oct. (2017) 2639-2647.

\[5\]E. Simoen et al. IEEE Trans. Nucl.Sci. vol. 60, no.3, Jun. (2013) 1970–1991.

\[6\]J. Riffaud et al. IEEE Trans. Nucl.Sci. vol. 65, no. 1, Jan. (2018), 39-45.

\[7\]J. Riffaud et al. IEEE Trans. Nucl.Sci. vol. 65, no. 8, Aug. (2018), 1525-1531.

\[8\] Liang Wang et al. IEEE Trans. Nucl.Sci. vol. 62, no. 6, DECEMBER (2015),2412-2416.


The Choice of MOSFET Manufacturing Technique Used in Emergency Response Robot

Division / Sponsors: 
Power Division & Nuclear Engineering Division (NED)

Power Conference
Paper Proceedings: https://asmedigitalcollection.asme.org/POWER/POWER2020/volume/83747

International Conference on Nuclear Engineering
Paper Proceedings: https://asmedigitalcollection.asme.org/ICONE/ICONE2020/volume/83761

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