Hafnium zirconium oxide, alloy of HfO~2~ and ZrO~2~, is promising for a range of applications, such as energy storage and harvesting and electronic memory devices. While a number of studies have studied the dielectric and structural properties of Zr-, Hf-based oxides, less investigated are their thermal properties, in thin-film form in particular. A few prior studies have reported the thermal conductivity of Zr-, Hf-based oxide thin films, grown by atomic layer deposition (ALD), but the literature on the thermal conductivity of these material systems is still limited. In this study, we report on measure the thermal Conductivity conductivities of thin films (\~60 nm) of yttria (Y~2~O~3~)-doped and undoped hafnium zirconium oxide, (Zr,Hf)~1-x~Y~x~O, grown by plasma-enhanced atomic layer deposition (PEALD), with compositions ranging of x from 0 to 0.5. Measurements were performed at room temperature via steady-state thermoreflectance (SSTR) method and analyzed to determine the effective thermal conductivity of the thin films and their associated (top and bottom) interfaces. The effective thermal conductivity of the undoped thin film is determined to be 0.86 W/m/K and a general trend of decreasing thermal conductivity with an increase in yttria composition is observed.


Thermal Conductivity Measurement of Yttria-Doped and Undoped Hafnium Zirconium Oxide Dielectrics Thin Films

Division / Sponsors: 
Electronic & Photonic Packaging Division (EPPD)

Paper Proceedings: https://asmedigitalcollection.asme.org/InterPACK/InterPACK2020/volume/84041

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