AlGaO and Ga2O3 are promising for applications in power electronics and radio frequency devices because of their exceptional properties. However, the heat dissipation of the corresponding devices will be limited by the ultra-low thermal conductivity of AlGaO and Ga2O3. Previous studies showed that these devices could achieve high power density with double-side or top-side cooling strategies. Therefore, the thermal transport across metal-AlGaO and metal-Ga2O3 contacts becomes very important, since heat will be conducted through this interface as a preferred pathway to extract heat from the devices. In this work, we study the thermal transport across Al-AlGaO and Al-Ga2O3 interfaces, and the orientation of Ga2O3 and AlGaO is (010).&nbsp; We have applied thermal and material characterization (time-domain thermoreflectance, Raman spectroscopy, scanning transmission electron microscope) together with theoretical approaches to understand the interfacial thermal transport at Al-AlGaO and Al-Ga2O3 contacts. It is found that for different growth methods, the highest TBC at Al-Ga2O3 interface is from the molecular beam epitaxy processing. However, the measured TBC from experiment is generally lower than the theoretical predictions, and it is related to the interfacial chemical reactions, that an oxidation layer of AlOx is formed at the interface. The effect of Al composition on interfacial thermal transport at Al/AlGaO interface is also studied. Our work provides insight into the understanding of thermal transport at AlGaO-metal and b-Ga2O3-metal interfaces and sheds light on the thermal design of b-Ga2O3 devices.

Thermal Transport Across Al-(AlxGa1-x)2O3 and Al-Ga2O3 Interfaces

Paper Proceedings: https://asmedigitalcollection.asme.org/InterPACK/InterPACK2021/volume/85505

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