<p contenteditable="true">Electron beam lithography (EBL) is an important lithographic process of scanning a focused electron beam to direct write a custom pattern with nanometric resolution. Due to the very limited writing field of the focused election beam, a motion stage is needed to move the sample to the writing field for processing large patterns. In order to eliminate the stitching error induced by the above "step&nbsp;and&nbsp;scan" process, we in this paper propose a large range compliant nano-manipulator in such way that the manipulator and the election beam are in motion simultaneously. An important feature of the proposed compliant manipulator lies in that the parasitic rotation can be actively eliminated. Experimental results demonstrate 2 mm × 2 mm travel range with high linearity and &lt; 6.9 µrad parasitic rotation over 0.5 mm × 0.5 mm range of motion. Moreover, the high natural frequency (∼ 60 Hz) of the manipulator facilitates it to achieve high-precision &nbsp;motion of tracking error &lt; 88 nm (20 Hz) and &lt; 89 nm (1 mm diameter circle).&nbsp;The experimental results of the proposed nano-manipulator outperform most of the existing ones.</p><p>motion a change of position that does not entail a change of location More (Definitions, Synonyms, Translation)</p>

A Larger Range Compliant Nano-Manipulator Supporting Electron Beam Lithography

Paper Proceedings: https://asmedigitalcollection.asme.org/IDETC-CIE/IDETC-CIE2021/volume/85369

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