Graphene has been one of the most studied materials since the turn of the century due to its widespread potential applications. Chemical vapour deposition (CVD) of precursor molecules on copper substrates is the most common approach to produce high quality graphene. CVD exploits the catalytic activity of the copper to activate C-H bond scission and C-C bond formation to form large area graphene with a high crystalline quality. Most procedures employ small molecular or even atomic carbon precursors for graphene synthesis. However, using these traditional precursors to grow graphene on Cu(111) requires high pressures and elevated substrate temperatures, incompatible with ultra-high vacuum conditions needed for many cutting edge characterisation techniques.<br/>In our approach, we instead use polycyclic hydrocarbons (PAHs) to grow graphene on Cu(111). The CVD synthesis of graphene is achieved at moderate substrate temperature using these PAH precursors. Furthermore, the low vapor pressure of the PAH precursors enables us to synthesise high quality graphene films in the low pressure regime of ultra-high vacuum conditions.<br/>Using a wide range of techniques including scanning tunnelling microscopy, low energy electron diffraction, angle resolved photoemission spectroscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, and normal incidence x-ray standing waves we were able to comprehensively characterise the produced graphene layer.

Growing graphene with polycyclic hydrocarbon precursors

ACS Spring 2022

The official archive and repository for all ACS Meetings & Expositions abstracts and select posters or presentations.