Presented is a method for doping multiple guest ions into a semiconductor matrix, whereby the dopants may be bonded to each other. The method is based on synthesizing semiconductor quantum dots (QDs) using an organometallic cluster that functions as a nucleating catalyst. Previous research by our group has demonstrated that the cluster is retained in the resulting nanoparticle, which creates an avenue for doping the QDs whereby each dot contains the exact same number of guest ions. This method subverts Poissonian statistics in doping to create homogeneously doped materials. Currently we are attempting to doubly dope nanomaterials using clusters whereby synergistic interactions between bonded dopant ions realize new properties. Specifically, doping a II-VI host with phosphorescent manganese, itself bonded to a heavy element such as tellurium, allows for tuning the dopant energy levels with respect to the host excition. Radiative lifetimes are also affected by the double doping approach. These data are augmented with DFT characterizations of the electronic structure of doped nanoscopic semiconductor systems.

Tuning semiconductor dopant energy levels with double doping via the cluster seed method

ACS Spring 2022

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