The development of wearable neuromorphic devices with skin-like form factors is very important for achieving the highly desired on-body in-sensor and near-sensor data processing, which will have a significant impact on personalized healthcare and biomedical applications. Organic electrochemical transistors (OECTs) that function based on gate-driven continuous and non-volatile electrochemical doping of polymer semiconductors resemble the biological ion-driven processes and kinetics have been demonstrated as one of the most promising device platforms for neuromorphic computing. However, owing to the lack of stretchable redox-active semiconducting polymers, skin-like softness and stretchability have not yet been realized in OECT-based neuromorphic devices. Here, we report a highly stretchable redox-active polymer semiconductor that can provide nearly unchanged electrical performance at 100% strain. The sufficient strain-induced chain alignment was validated as the key enabler for high stretchability. Through combining innovations in material and device designs, we fabricated an intrinsically stretchable neuromorphic device that provides all the desired computational and mechanical characteristics for on-body neuromorphic computing, including a large number (&gt;800) of distinct memory states, highly linear/symmetric weight update with low switching variations, excellent switching endurance (&gt;10<sup>8</sup>), good state retention (&gt;10<sup>4</sup> s), together with the high stretchability of 100% strain over 100 repeated cycles. Further integration into a prototype array successfully realized the implementation of vector-matrix multiplication at 100% strain.

Stretchable redox-active polymer semiconductors and electrochemical transistors for on-body neuromorphic computing

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ACS Fall 2022

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