The QD-LEDs are in line with the emerging direction pursued by the current display industry, a self-emissive display. Indium phosphide (InP) colloidal quantum dots (QDs) have emerged as a non-toxic alternative for display applications. The optical properties of InP QDs as a fluorophore satisfy the requirements as a color conversion layer in QD display. Many synthesis methods and surface treatment protocols have been explored to find a better pathway for improving device performance; however, the performance of QD-LEDs is insufficient for the display applications. The midgap states, known as trap states, have significant role in the LED device performance. And the midgap states have been studied using spectroscopy to identify the reason for the inadequate performance and lifetime of InP QD-LEDs.<br/>In this study, we have examined the InP QD layers in the device electrically using an impedance analyzer to analyze the energy level and the density of trap states. We can identify the shallow trap state that have been hardly observed in the photoluminescence of InP QD cores. This trap state is consistent with the electronic midgap states originating from P-dangling bonds. Further impedance analysis results of InP QDs will be presented.

Electronic trap analysis in InP QD devices

Fall 2022 abstracts, posters, and presentations will launch in mid-September.

ACS Fall 2022

The official archive and repository for all ACS Meetings & Expositions abstracts and select posters or presentations.