Colloidal quantum dots (CQDs) having size dependent quantum confinement effect are promising materials for optoelectric devices such as photovoltaics, light emitting diode, and photodetector. Cost efficient production and wide spectral tunability of CQDs make them potential candidates especially in infrared(IR) application. Recently, synthetic methods for high quality InAs CQDs as an IR-active alternative of Pb- and Cd- based materials have been reported. In order to design semiconductor devices optimally, it is important to control electrical properties in addition to preparation of high quality materials. However, tuning the polarity in CQDs is more challenging compared to bulk semiconductors, in which carrier type can be easily controlled by impurities doping. As-synthesized CQDs with cation-rich surfaces commonly show n-type transport behavior. p-type CQDs have been rarely reported despite of various attempts such as impurities doping, stoichiometry control, and ligand exchange. Also, most of them are lead-based CQDs, which have to be changed by alternatives with less toxicity. Here, we synthesized Zn doped p-type InAs CQDs. In this system, Zn was successfully incorporated during InAs synthesis and p-type transport behavior was confirmed by field-effect transistor(FET) measurement.

Zinc doped indium arsenide colloidal quantum dots with p-type polarity

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