The extension of Moore’s law remains a focal point as semiconductor manufacturers drive to advance Integrated Circuit (IC) technology via the implementation of new materials. To keep up with these demands, semiconductor manufacturing implements Chemical Mechanical Planarization (CMP) as a critical processing step in device fabrication. To achieve Angstrom level uniformity, CMP utilizes a complex colloid dispersion containing abrasive nanoparticles and additives to create a synergistic balance that aids in surface modification (i.e., suppression or activation). As the design layout of IC devices moves toward implementing the use of next generation metal layers, the intricacies of regulating surface modulation without leading to corrosion become arduous and ambitious. More specifically, these progressive metals in emerging technology results in the propensity for galvanic corrosion to occur leading to increased defectivity. Therefore, the implementation of metal passivating agents (i.e., amine compounds) have become increasingly prevalent due to the ability to modulate surface redox reactions controlling the metal substrate corrosion. This work focuses on surveying emerging substrates used in semiconductor devices (i.e., Cu, W, Ti, Co, Mo, glassy carbon, etc.) in the presence of structurally diverse amine compounds to understand the interfacial mechanisms of these passivating agents. More specifically, this work will utilize dynamic electrochemical techniques (i.e., tafel analysis, OCP vs Time, etc) to evaluate critical surface complexes and the impact on film formation kinetics and passivation density. Additionally, analysis of substrate topography was performed utilizing metrology instruments (i.e., 3D Optical Profiler, AFM, SEM, etc.) to gain insight on the effect on metal surface roughness as a function of passivating agent structure. Initial results have shown that the implementation of disparate amine compounds leads to tunable passivating films of varying densities and porosities to provide tunable surface density resulting in redox controllable CMP performance.

Effect of passivating agent structure on the electrochemical interface of emerging substrates for advanced integrated circuit (IC) devices

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ACS Fall 2022

The official archive and repository for all ACS Meetings & Expositions abstracts and select posters or presentations.