During the repetition of on/off switching in organic field-effect transistors (OFETs), mobile charge carriers possibly encounter with immobilization due to various origins, leading to the degradation of electrical properties. Herein, we proposed the facile methodology for the recovery of degraded OFETs via temporary monochromatic illumination. In the bias-stressed OFETs, we found that the recovery rate was significantly dependent on the wavelength of light and non-linearity proportional to the light intensity. The 630 nm wave was impossible to heal the trapped charges, whereas the 460 nm wave rapidly recovered the device performance in a few minutes. When the bias-stressed device was irradiated to 460 nm light, the onset and threshold voltages reverted to the initial state, which is attributed to the mobilization of charges in deep trap. The recovery rate (<i>R</i>) as a function of illumination power follows a power law, dependence with the exponent of 1/2. In this device, the photo-induced recovery follows the mechanism of exciton annihilation and hot carrier generation by exciton-charge collision. This investigation can provide a more efficient way of photo-related organic electronics, such as OFETs, photodetectors, and phototransistors.

Mechanism of photo-induced recovery of metastable charge traps in organic field-effect transistor

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