The 2D materials and their stacking heterostructureshave inspired enormous interests due to their extraordinary physical properties. WSe2, as a p-type semiconductor, represents a foremost building block in the p-n junctions. WSe2 shall possesses the features of large area, homogeneity and precise layer control. To date, there is yet an ideal synthesis method ever reported. Here, we present a facile approach to prepare high-quality large-area homogenous WSe2 full films. In brief, we developed a pre-seeding strategy for depositing W-containing precursors over dielectric substrates, which form well-distributed particles as seeding center. Upon the salt-assisted sublimation of tungsten oxides, the WSe2 forms over the seeded substrates (at high temperature) in the Se-rich atmosphere. Eventually, the high quality of the synthetic film has been reflected on the high performances of photodetectors and field-effect transistors. Our finding may pave the way of sub-1 cm scale growth of transition metal dichalcogenides, which are ideal starting materials for the integrated flexible electronics. In future, we may apply this strategy to the synthesis of layered noble metal dichalcogenides (such as PdSe2).

Controlled growth of high-quality transition metal dichalcogenides for optoelectronics and electronics

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ACS Fall 2022

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