The continued downscaling of nano-electronic devices towards and beyond the limits of Moore's Law requires fabrication techniques such as area selective atomic layer deposition, which have a high atomic precision over the dimensions of device features. Selectivity can be imposed by terminating regions of a silicon surface with atomic monolayers. Silicon terminated with hydrogen (H-Si) and chlorine (Cl-Si) have both previously been demonstrated as effective non-growth surfaces towards TiO2 deposition with titanium tetrachloride (TiCl4) and water, while termination with a hydroxyl monolayer (HO-Si) was a reactive growth surface. Here, reactivity of tetrakis(dimethylamido)titanium (TDMAT) with halogenated surfaces at 100 oC in high vacuum was investigated by in situ Fourier-transform infrared spectroscopy (FT-IR) and ex situ X-ray photoelectron spectroscopy (XPS).

Selectivity of halogenated silicon surfaces in atomic layer depostion of tetrakis(dimethylamido)titanium

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