In this study, thin films of mesoporous titania (m-TiO<sub>x</sub>) were developed by the evaporation induced self-assembly (EISA) method as an active layer of memristor devices. The devices were studied over the comparison of resistive switching behaviour among three differently fabricated device formats (Crossbar array, cap structure, and parallel electrode) along with the various materials such as Al, Pt, ITO and Au. The hysteresis IV characteristics with SET (ON) and RESET (OFF) state showed that m-TiO<sub>x </sub>successfully demonstrated memristive behaviour for all device formats. An equivalent circuit model could allow us to determine that the electrical conduction mechanism for the three devices were dominated by the Schottky emission (SE) and Ohmic conduction mechanism for all compositions. This study can open more possibilities to develop a neuromorphic device, which can be applied in different structural purposes.

Characterisation of memristive property in mesoporous titania with various device alignment

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