Area-selective atomic layer deposition has received rapidly increasing interest as a technique to fabricate nano-electronic devices with atomic precision over thickness and lateral dimensions. Selectivity is typically obtained using substrates patterned with differing surface chemistries. Both chlorinated (Cl-Si) and hydrogenated (H-Si) silicon have previously been demonstrated to be effective non-growth surfaces, preventing thermal deposition of TiO2 using titanium tetrachloride (TiCl4) and water as co-reactants, while oxidized silicon (HO-Si) was a reactive growth-promoting surface. Here, reactivity of tetrakis(dimethylamido)titanium (TDMAT) with all these surfaces at 100 oC in high vacuum was investigated by in situ Fourier-transform infrared spectroscopy (FT-IR) and ex situ X-ray photoelectron spectroscopy (XPS). Reactions were modeled with density functional theory (DFT) computations on clusters representing the H-Si(100) and Cl-Si(100) surfaces.

Understanding monolayer resists for atomic layer deposition: tetrakis(dimethylamido)titanium reactions with modified silicon surfaces

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