Layered materials such as transition metal dichalcogenides (TMDs) have attracted much interest due to their semiconducting properties from the tunability of size and dimension. Beyond exfoliation and intercalation as the basic manipulations on layered materials, we first introduce chemically-induced slippage in bulk tungsten diselenide (WSe2) as a new bulk-scale manipulation of layered structures. Powder X-ray diffraction pattern of DMSO-ground WSe2 reveals that the crystallinity between layers is attenuated while stacking features remain. By tracing E1g mode in Raman spectroscopy analysis, we find evidence that the edges of layers are more exposed after slippage. 77Se solid-state NMR spectroscopy analysis indicates that the layers of DMSO-ground WSe2 are intact. Additionally, we tested and revealed that annealing DMSO-ground WSe2 recovers the bulk structure by XRD. Interestingly, the recovery is faster in air than in Argon. Further, XRD patterns simulated by varying the degree of translational slippage confirm the trend that translational stacking changes follow experimental slippage. From understanding slippage behavior, chemically-induced slippage can be one of the fundamental manipulations for layered materials.

Chemically-induced slippage in bulk layered WSe2

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