Semiconductor heterostructures are critical architectures for solid state energy applications. For halide perovskites, heterostructures of varying perovskite compositions are difficult to fabricate due to the limitations in processing and halide perovskite’s fast ion diffusion kinetics; both of which lead to poor heterostructure interfaces and alloyed materials. Here we demonstrate a solvent free method to deposit single layer graphene in between films of CsPbBr<sub>3</sub> and CsPbI<sub>3</sub> nanocrystals. Characterization including basic steady state optical spectroscopy, TOF-SIMs, and SEM shows the integration of graphene successfully blocks the diffusion of halide ions between the materials and a sharp heterojunction is maintained. Ultraviolet photoelectron spectroscopy, transient absorbance spectroscopy, and DFT calculations show the interaction of the graphene does not impede any energy transfer processes between the perovskite materials. This demonstration of graphene integration into perovskite/perovskite heterostructures is an excellent platform for researchers to build upon for targeted architectures and applications, not previously accessible.

Fabricating perovskite heterostructures: Graphene incorporation blocks halide diffusion

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