This paper uses the finite element method for numerical simulation and builds a steady-state global model to simulate calculation of thermal stress for 200 mm floating zone silicon growing process in CGsim software. The effects of crystal rotation speed, pull speed, melt-crystal interface and argon flow rate on the thermal stress field of the silicon growing process are systematically studied. In addition, optimization parameters are proposed to decrease the thermal stress to improve the stability of floating zone silicon growing process and avoid the cracking of crystal. The results show that decrease the pull speed can effectively reduce thermal stress by 1.9-2.2mm/min, and decrease the melt-crystal growth interface curvature through this optimization, which helps to improve the crystal quality and reduce the cost. The numerical results is verified through experiments measured in the grown crystal. This study will provide some references for the optimization of large-diameter floating zone silicon growing process.

Study of thermal stress in large-diameter FZ Si crystal growing by numerical simulations

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