Wide bandgap semiconductors play an essential role in the fabrication of various opto-electronic devices such as transparent p-n junctions, perovskite solar cells, and light-emitting diodes. In this talk, we will discuss the epitaxial electrodeposition of the wide bandgap semiconductors CuBr and CuSCN on single-crystal-like substrates. Cuprous halides show potential for short-wavelength devices due to a large exciton binding energy and a near-ultraviolet bandgap. We introduce a low-cost electrochemical procedure for producing epitaxial CuBr(111) on a Ag(111) substrate by a [111]-oriented silver bromide (AgBr) buffer layer. The AgBr buffer layer forms during the electrodeposition of the CuBr. CuBr(100) is also produced on a Ag(100) surface by a AgBr(100) buffer layer that is rotated in-plane 45° relative to the Ag(100) surface. Epitaxial wide bandgap CuSCN nanowires were electrodeposited onto a Au(111) surface and were removed by epitaxial lift-off to produce single-crystal-like flexible foils.

Epitaxial electrodeposition of wide bandgap semiconductors

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