<br/>Area-selective atomic layer deposition (AS-ALD) is commonly considered as a key technology for enabling atomically precise, self-aligned bottom-up manufacturing of ultra-efficient electronic, photonic and quantum devices. It is often suggested as a higher-resolution replacement for current top-down micromachining techniques that can further advance the development of 3D integrated circuits. The current efforts in this field are focused on the development of ultra-thin atomic and molecular ALD resists that can be patterned at high resolution to create chemo-selective growth and non-growth areas. Patterning of the AS-ALD resists is usually performed using highly resist-substrate specific, low-resolution methods incompatible with the ALD conditions.<br/>In this talk, we will discuss our current efforts on the development of universal, nanosecond and picosecond pulsed laser-promoted patterning of atomic ALD resists. We hypothesize that light-substrate interactions can introduce growth-promoting defects on most atomic ALD resists enabling universal, in-situ patterning of various substrate/resist combinations. Our results show that pulsed laser exposures of the monoatomic resist layers promote chemical oxidation of the resist molecules without causing physical substrate damage. Such oxidized areas were shown to promote ALD film growth on an otherwise ALD blocking resist layer.

Laser-induced patterning of atomic layer resists for area-selective atomic layer deposition

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