Compared with the traditional Czochralski method (CZ), the continuous-feeding Czochralski (CCZ) can replenish silicon material into the crucible during the crystal growth continuously. Therefore, the output of monocrystalline silicon is no longer limited by the crucible size, and growing large diameter and long silicon crystal rods can be realized. It can make the axial distribution of the dopant more uniform.
A numerical model that can calculate the heat and mass transfer for a 12-inch monocrystalline silicon crystal growth is established. With the model, we study the distributions of temperature, velocity and oxygen impurity in a CCZ system with different crystal rotation speeds. The crystal rotation speed in the CCZ system influences the temperature distribution significantly, and it may also change the melt flow pattern, oxygen evaporation and crystallization interface shape. Therefore, suitable crystal rotation speed should be specially designed for the CCZ system to grow 12-inch perfect silicon crystal.
This work was supported by the State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences.

Effects of rotation speed on 12-inch silicon crystal growth by continuous-feeding Czochralski

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