The stacking of 2D materials for van der Waals heterostructures have provided possibilities for continuing the size reduction as predicted Moore’s law. The noble metal chalcogenides NMC (NM=Pt, Pd, and C=S, Se, Te) become an important group of 2D materials because of their narrow bandgap and high air stability. In this talk, we discuss the progress in wafer scale synthesis of noble metal chalcogenides, taking the PtS and PdSe<sub>2</sub> as two models. First, the metal sulfidation or selenization methods have been employed for guaranteeing the large area homogeneity, which are compatible with conventional Si based technology. Then, the homogeneity has been studied by Raman spectral mapping. Next, the device performances of these materials have been testified in the field-effect transistors and photodetectors. Our reports have shed light on wafer-scale growth of noble metal chalcogenides in a controllable fashion. Thereby, more choices have been provided for the design of van der Waal heterostructures in the electronic component applications.

Wafer scale growth of noble metal chalcogenides for high performances photodetectors and transistors

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