A common defect in Czochralski single-crystal silicon is dislocations. However, different doping elements in Czochralski single crystal silicon cause dislocation distributions to differ. We have investigated the effect of phosphorus and gallium doping on the formation of dislocations during the growth of Czochralski single-crystal silicon using a combination of numerical analysis and experimental detection. The results show that the dislocation density of Ga-doped P-type single-crystal silicon rods is high at the head and low at the tail, and the dislocation density of P-doped N-type single-crystal silicon rods is high at the head and tail due to the difference of the fractionation effect. Based on the results of these studies, we have developed some new ideas for improving the growth process of single crystal silicon with various doping elements.

Influence of different doping elements on dislocations in Czochralski single-crystal silicon

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